After that it drops back to TLC speed until the data is transferred to the TLC nand. Here is how it works, as long as the buffer is not full, the writes performs at SLC speed. The table below shows the reserved amount depending on the drive size. That reserved amount is used as emulated SLC, which results in faster write I/O. Samsung converted the space normally used for overprovisioning in the first generation of the 840 into a write buffer area. TurboWrite: This is the technology at the core of the write I/O improvement. "TURBOWRITE: THIS IS THE TECHNOLOGY AT THE CORE OF THE WRITE I/O IMPROVEMENT" New controller, EMX: The fifth generation is still a triple-core ARM cortex R4 but is clocked at 400Mhz, a 100Mhz bump or a 33% performance increase. SATA 3.1 support: Among the improvements in the SATA 3.1, Queued TRIM Command is the most relevant to SSDs. The 128Gb TLC NAND opened up access to larger capacity, up to 1TB. Let’s check the specifications then I will dive into the review with the Amazon “SSD best seller”, the EVO 250GB and the EVO 750GB. It shows that performance is not solely based on NAND architecture but other components are almost equally important. Looking at the data-sheets from Samsung for the 840 EVO, it appeared that Samsung has closed the gap between MLC and TLC. The first generation of Samsung TLC SSD stacked up with MLC drives on the read I/O but lagged behind in term of writes I/O. With this new line, Samsung broadens their offer with five drives ranging from 120GB up to 1TB. Capitalizing on their success with the 840 series, Samsung released their new SSD TLC based drives named EVO.
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